2SC2309 - Hitachi Semiconductor

2SC2309 Silicon NPN Transistor

2SC2309 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2309 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO V.

Features

ain bandwidth product Collector output capacitance Note: D 250 to 500 E 400 to 800 F 600 to 1200 V(BR)EBO I CBO I EBO hFE
* VBE VCE(sat) fT Cob 250 — — — — V V MHz pF VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SC2309 is grouped by h FE as follows. See characteristic curves of 2SC1345. 2 2SC2309 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 250 200 150 100 50 0 50 100 Ambient Temperature Ta (°C) 150 3 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2..