2SC1683 - INCHANGE

2SC1683 NPN Transistor

·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·Complementary pair with 2SA843 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifier ·Color TV vertical deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI.

Features

ector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(ON) Base-Emitter ON Voltage IC= 0.4A ; VCE= 10V ICBO Collector Cutoff Current VCB= 200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.4A ; VCE= 10V MIN TYP. MAX UNIT 150 V 1.0 V 1.0 V 50 μA 50 μA 60 200  hFE Classifications P Q 60-140 85-200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide f.