·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage .
breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IC=1m A; IE=0 IE=1mA; IC=0 IC=10 A;IB=1 A IC=10 A;IB=1 A VCB=100V; IE=0 VCE=60V; IB=0 VEB=6V; IC=0 IC=5A ; VCE=5V 30 MIN 100 150 6 SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE 2SC1610 TYP. MAX UNIT V V V 1.0 2.0 0.1 1.0 0.1 160 V V mA mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transi.
·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1615 |
Rohm |
NPN Transistor | |
2 | 2SC1617 |
INCHANGE |
NPN Transistor | |
3 | 2SC1617 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC1617 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC1618 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC1618 |
INCHANGE |
NPN Transistor | |
7 | 2SC1619 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC1619 |
INCHANGE |
NPN Transistor | |
9 | 2SC1609 |
INCHANGE |
NPN Transistor | |
10 | 2SC1609 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC1621 |
NEC |
PNP Transistor | |
12 | 2SC1621 |
Kexin |
NPN Silicon Transistor |