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2SC1683 |
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| Part Number | 2SC1683 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·Complementary pair with 2SA843 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performan... |
| Features |
ector-Emitter Breakdown Voltage IC= 5mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(ON) Base-Emitter ON Voltage
IC= 0.4A ; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.4A ; VCE= 10V
MIN TYP. MAX UNIT
150
V
1.0
V
1.0
V
50 μA
50 μA
60
200
hFE Classifications P Q 60-140 85-200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide f... |
| Document |
 2SC1683 Data Sheet
PDF 185.61KB |
| Distributor | Stock | Price | Buy |
|---|
