·With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collecto.
t-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A VCB=150V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=12V 30 MIN 100 6 2SC1584 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 2.0 0.1 0.1 V mA mA 10 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1584 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complemen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1580 |
INCHANGE |
NPN Transistor | |
2 | 2SC1583 |
JCET |
DUAL TRANSISTOR | |
3 | 2SC1585 |
INCHANGE |
NPN Transistor | |
4 | 2SC1585 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC1586 |
INCHANGE |
NPN Transistor | |
6 | 2SC1586 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC1501 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC1504 |
INCHANGE |
NPN Transistor | |
9 | 2SC1504 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC1505 |
NEC |
Silicon Power Transistor | |
11 | 2SC1505 |
INCHANGE |
NPN Transistor | |
12 | 2SC1506 |
NEC |
NPN Silicon Transistor |