2SB996 - INCHANGE

2SB996 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

Features

mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -3A; VCE= -5V  hFE-1 Classifications R O Y 40-80 70-140 120-240 2SB996 MIN TYP. MAX UNIT -80 V -1.7 V -1.5 V -30 μA -0.1 mA 40 240 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained here.