2SB992 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max.) (at I C=-4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SD1362 INDUSTRIAL APPLICATIONS Unit in mm.
. High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max.) (at I C=-4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SD1362 INDUSTRIAL APPLICATIONS Unit in mm 1CX3MAX. 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25 C VCBO VcEO VEBO ic IB PC Junction Temperature Storage Temperature Range Lstg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING -100 -80 -5 -7 UNIT 1..
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collec.
·With TO-220 package ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Suitable for relay drivers,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB991 |
INCHANGE |
PNP Transistor | |
2 | 2SB993 |
INCHANGE |
PNP Transistor | |
3 | 2SB993 |
Toshiba |
SILICON PNP TRANSISTOR | |
4 | 2SB993 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SB994 |
INCHANGE |
PNP Transistor | |
6 | 2SB994 |
Toshiba |
SILICON PNP TRANSISTOR | |
7 | 2SB994 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SB995 |
INCHANGE |
PNP Transistor | |
9 | 2SB995 |
Toshiba |
SILICON PNP TRANSISTOR | |
10 | 2SB995 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SB996 |
Toshiba |
SILICON PNP TRANSISTOR | |
12 | 2SB996 |
INCHANGE |
PNP Transistor |