2SB991 - INCHANGE

2SB991 PNP Transistor

·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXI.

Features

SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat)★ Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat)★ Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -180V; IE= 0 ICEO Collector Cutoff Current VCE= -180V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1★ DC Current Gain IC= -5mA ; VCE= -5V hFE-2★ DC Current Gain IC= -0.3A ; VCE= -5V fT Current.