2SB991 INCHANGE PNP Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SB991

INCHANGE
2SB991
2SB991 2SB991
zoom Click to view a larger image
Part Number 2SB991
Manufacturer INCHANGE
Description ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lo...
Features SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat)★ Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat)★ Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -180V; IE= 0 ICEO Collector Cutoff Current VCE= -180V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1★ DC Current Gain IC= -5mA ; VCE= -5V hFE-2★ DC Current Gain IC= -0.3A ; VCE= -5V fT Current...

Document Datasheet 2SB991 Data Sheet
PDF 182.80KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 2SB992
INCHANGE
PNP Transistor Datasheet
2 2SB992
Toshiba
SILICON PNP TRANSISTOR Datasheet
3 2SB992
SavantIC
SILICON POWER TRANSISTOR Datasheet
4 2SB993
INCHANGE
PNP Transistor Datasheet
5 2SB993
Toshiba
SILICON PNP TRANSISTOR Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact