Power Transistors 2SB931 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1254 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q q 1.5±0.1 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package e.
q q q q
1.5±0.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings
–130
–80
–7
–6
–3 30 1.3 150
–55 to +150 Unit V
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector powe.
SMD Type Silicon PNP Epitaxial Planar Type 2SB931 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features L.
Power Transistors 2SB0931 (2SB931) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching Complemen.
Product specification 2SB931 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB930 |
Panasonic Semiconductor |
PNP Transistor | |
2 | 2SB930 |
TY Semiconductor |
Transistor | |
3 | 2SB930A |
Panasonic Semiconductor |
PNP Transistor | |
4 | 2SB930A |
Kexin |
Transistor | |
5 | 2SB930A |
TY Semiconductor |
Transistor | |
6 | 2SB932 |
Panasonic Semiconductor |
Power Transistors | |
7 | 2SB932 |
Kexin |
Transistor | |
8 | 2SB932 |
TY Semiconductor |
Transistor | |
9 | 2SB933 |
Panasonic Semiconductor |
PNP Transistor | |
10 | 2SB933 |
Panasonic Semiconductor |
Power Transistors | |
11 | 2SB933 |
Kexin |
Transistor | |
12 | 2SB933 |
TY Semiconductor |
Transistor |