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SMD Type Silicon PNP Epitaxial Planar Type 2SB930A TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 .
High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -80 -80 -5 -4 -8 1.3 150 -.
2SB930A - TY Semiconductor
Product specification 2SB930A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15.
2SB930A - Panasonic Semiconductor
Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB930 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB930 |
TY Semiconductor |
Transistor |
|
| 3 | 2SB931 |
Panasonic Semiconductor |
PNP Transistor |
|
| 4 | 2SB931 |
Panasonic Semiconductor |
Power Transistors |
|
| 5 | 2SB931 |
Kexin |
Transistor |
|
| 6 | 2SB931 |
TY Semiconductor |
Transistor |
|
| 7 | 2SB932 |
Panasonic Semiconductor |
Power Transistors |
|
| 8 | 2SB932 |
Kexin |
Transistor |
|
| 9 | 2SB932 |
TY Semiconductor |
Transistor |
|
| 10 | 2SB933 |
Panasonic Semiconductor |
PNP Transistor |
|
| 11 | 2SB933 |
Panasonic Semiconductor |
Power Transistors |
|
| 12 | 2SB933 |
Kexin |
Transistor |
|