2SB930 - Panasonic Semiconductor

2SB930 PNP Transistor

Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling .

Features

q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings
  –60
  –80
  –60
  –80
  –5
  –8
  –4 40 1.3 150
  –55 to +150 Unit V 2SB930 2SB930A 2SB930 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit.