2SB861 - Hitachi Semiconductor

2SB861 Silicon PNP Transistor

2SB861 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collec.

Features

atio V(BR)EBO I CBO hFE1
* hFE2 Collector to emitter saturation voltage Base to emitter voltage Collector output capacitance VCE(sat) VBE Cob 60 60 — — — V V pF I C =
  –500 mA, IB =
  –50 mA VCE =
  –4 V, IC =
  –50 mA VCB =
  –100 V, IE = 0, f = 1 MHz Notes: 1. The 2SB861 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 40 Collector power dissipation Pc (W)
  –10 30 Collector Current IC (A)
  –5
  –2
  –1.0
  –0.5
  –0.2
  –0.1 200 (
  –150 V,
  –65 mA)
  –0.05
  –2
  –5
  –10
  –20
  –50
  –100
  –200 Collector to emitter Voltage VCE (V) IC (max) (Continuous) DC Area of Saf.