2SB861 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB861

INCHANGE
2SB861
2SB861 2SB861
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Part Number 2SB861
Manufacturer INCHANGE
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1138 ·Minimum Lot-to-Lot variations for robust device performance and reliable ope...
Features MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V -1.0 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -1 μA hFE-1 DC Current Gain IC= -50mA ; VCE= -4V 60 200 hFE-2 DC Current Gain IC= -500mA ; VCE= -10V 60 COB Output Capacitance IE= 0; VCB=-100V;ftest= 1.0MHz 30 pF
 hFE-1 Classifications B C 60-120 100-200 NOTICE: ISC reserves...

Document Datasheet 2SB861 Data Sheet
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