2SB786 - INCHANGE

2SB786 PNP Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

Features

fied SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA; IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.6A; IB= -1.2mA ICEO Collector Cutoff Current VCE= -40V; IB= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.5A ; VCE= -3V fT Current-Gain—Bandwidth Product IC=-0.1A ; VCE= -6V COB Output Capacitance IE=0; VCB= -10V; f= 1MHz MIN -40 -5 -40.