2SB781 - INCHANGE

2SB781 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good Linearity of hFE ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V.

Features

O Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -50V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE1 DC Current Gain IC= -0.5A ; VCE= -5V hFE2 DC Current Gain IC= -4A ; VCE= -5V fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V MIN TYP. MAX UNIT -50 V -1.0 V -1.0 V -100 μA -10 μA 60 320 10 5 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any tim.