·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V.
O Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -60V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE1 DC Current Gain IC= -0.5A ; VCE= -5V hFE2 DC Current Gain IC= -4A ; VCE= -5V fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V MIN TYP. MAX UNIT -60 V -1.0 V -1.0 V -100 μA -10 μA 60 320 10 5 MHz Notice: ISC reserves the rights to make changes of the content herein the datasheet at any tim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB781 |
INCHANGE |
PNP Transistor | |
2 | 2SB783 |
INCHANGE |
PNP Transistor | |
3 | 2SB786 |
INCHANGE |
PNP Transistor | |
4 | 2SB788 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
5 | 2SB789 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
6 | 2SB789A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
7 | 2SB703 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SB703 |
INCHANGE |
PNP Transistor | |
9 | 2SB705 |
INCHANGE |
PNP Transistor | |
10 | 2SB705 |
SavantIC |
Silicon PNP Power Transistors | |
11 | 2SB705A |
SavantIC |
Silicon PNP Power Transistors | |
12 | 2SB705A |
Inchange Semiconductor |
Power Transistor |