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·With TO-220C package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For low frequency power amplifier, TV vertical deflection ouptut applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-e.
turation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; RBE=< IE=-1mA; IC=0 IC=-1A;IB=-0.1 A VCE=-80V; RBE=< VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50mA ; VCE=-4V 50 25 MIN -100 -4 2SB689 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V -1.0 -100 -50 250 350 V µA µA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB689 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 .
2SB689 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Mini.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB681 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB681 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB682 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB683 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB686 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB686 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB686 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 8 | 2SB688 |
Savantic |
Silicon PNP Power Transistors |
|
| 9 | 2SB688 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | 2SB688 |
First Silicon |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 11 | 2SB688 |
JCET |
PNP Transistor |
|
| 12 | 2SB688 |
Toshiba |
Silicon PNP Transistor |
|