2SB689 |
Part Number | 2SB689 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
Features |
reakdown Voltage IC= -10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
ICEO
Collector Cutoff Current
VCE= -80V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= -3.5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -4V
hFE-2
DC Current Gain
IC= -50mA; VCE= -4V
2SB689
MIN TYP. MAX UNIT
-100
V
-4
V
-1.0
V
-100 μA
-50 μA
50
250
25
350
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented... |
Document |
2SB689 Data Sheet
PDF 209.68KB |
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