2SB689 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB689

INCHANGE
2SB689
2SB689 2SB689
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Part Number 2SB689
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ...
Features reakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICEO Collector Cutoff Current VCE= -80V; RBE= ∞ IEBO Emitter Cutoff Current VEB= -3.5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -4V hFE-2 DC Current Gain IC= -50mA; VCE= -4V 2SB689 MIN TYP. MAX UNIT -100 V -4 V -1.0 V -100 μA -50 μA 50 250 25 350 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented...

Document Datasheet 2SB689 Data Sheet
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