2SB682 - INCHANGE

2SB682 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo.

Features

kdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -3A; VCE= -5V MIN TYP. MAX UNIT -100 V -5 V -1.7 V -1.5 V -30 μA -0.1 mA -0.1 mA 55 300 15  hFE-1 Classifications C D E 55-110 90-180 150-300 NOTICE： ISC reserves the rights to make changes of the content .