2SB1554 - Panasonic Semiconductor

2SB1554 Silicon PNP epitaxial planar type Transistor

Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector.

Features

13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip Ratings
  –60
  –60
  –20
  –8
  –4
  –2 15 2 150
  –55 to +150 Unit V V V A A.