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·With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collecto.
tage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA, IB=0 IC=-0.1mA, IE=0 IE=-2mA, IC=0 IC=-5A ,IB=-20mA IC=-5A ,IB=-20mA VCB=-80V, IE=0 VEB=-5V, IC=0 IC=-5A ; VCE=-3V 1000 MIN -80 -80 -5 2SB1551 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V -2.0 -2.5 -10 -2 20000 V V µA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1551 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 .
2SB1551 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in resistor between base and emi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1550 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SB1550 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1553 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 4 | 2SB1554 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 5 | 2SB1555 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 6 | 2SB1555 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1556 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 8 | 2SB1556 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1556 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB1557 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 11 | 2SB1558 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 12 | 2SB1558 |
SavantIC |
SILICON POWER TRANSISTOR |
|