2SB1553 - Panasonic Semiconductor

2SB1553 Silicon PNP epitaxial planar type Transistor

Power Transistors 2SB1553 Silicon PNP epitaxial planar type For power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –60 –6 –6 –3 –1 15 2 150 –55 .

Features

13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing automatic insertion with radial taping (TC=25˚C) Ratings
  –60
  –60
  –6
  –6
  –3
  –1 15 2 150
  –55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO .