·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage ·Complement to Type 2SD2374 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A -1.2 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.8 V ICES Collector Cutoff Current VCE= -60V ; VBE= 0 -200 μA ICEO Collector Cutoff Current VCE= -30V ; IB= 0 -300 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 70 250 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 10 fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V; ftest= 10MHz 30 MHz Switching Times ton Turn-on Time 0.5 μs tstg Storage Time IC= -1A, IB1= -IB2= -0.1A, 1.2 μs tf F.
Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 .
·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1545 |
Matsushita Electric |
Transistors | |
2 | 2SB1548A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | 2SB1548A |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1548A |
INCHANGE |
PNP Transistor | |
5 | 2SB1502 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
6 | 2SB1502 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor | |
7 | 2SB1502 |
INCHANGE |
PNP Transistor | |
8 | 2SB1503 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
9 | 2SB1503 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SB1503 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor | |
11 | 2SB1503 |
INCHANGE |
PNP Transistor | |
12 | 2SB1504 |
Panasonic |
Silicon PNP epitaxial planar type darlington |