·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) ·Complement to Type 2SD2219 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.
mitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain Switching Times IC= -6A; VCE= -2V ton Turn-on Time tstg Storage Time tf Fall Time VCC= -10V, RL= 2Ω, IC= -5A;IB1= -IB2= -0.5A, hFE-1 Classifications Q R S 70-140 100-200 140-280 2SB1468 MIN T.
Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1462 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SB1462L |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | 2SB1463 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
4 | 2SB1464 |
Panasonic |
PNP Transistor | |
5 | 2SB1465 |
Renesas |
PNP SILICON EPITAXIAL TRANSISTOR | |
6 | 2SB1467 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
7 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
8 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1400 |
INCHANGE |
PNP Transistor | |
10 | 2SB1401 |
Hitachi |
Low frequency power amplifier | |
11 | 2SB1402 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1402 |
INCHANGE |
PNP Transistor |