2SB1462L - Panasonic Semiconductor

2SB1462L Silicon PNP Transistor

Transistors 2SB1462L Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216L 32 Unit: mm 0.020±0.010 0.80±0.05 I Features • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 2.

Features

• High foward current transfer ratio hFE
• Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
* Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg −60 −50 −7 −200 −100 150 125 −55 to +125 Note)
*: Printed circuit board copper foil for collector portion area: 20.0 mm2 or more, thicknes.