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2SB1464 http://www.semi、con.panaso、nic.co.jp、。。Sold1er4.0Di±p0.54.0 s q q q s (TC=25˚C) TC=25°C Ta=25°C VCBO VCEO VEBO ICP IC PC Tj Tstg –100 –100 –7 –12 –8 25 2.0 150 –55 ~ +150 V V V A A W ˚C ˚C s (TC=25˚C) 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.2.
0 140 160
Ta (˚C)
IC (A) IC (A)
IC — VCE(sat)
–8 (2)
(1)
–IC/
–IB=250
(1)
–7
(2)
–IC/
–IB=500 (3)
–IC/
–IB=1000
(3) TC=25˚C
–6
–5
–4
–3
–2
–1
0 0
–2
–4
–6
–8
VCE(sat) (V)
2SB1464
IC — VBE(sat)
–8 (2) (3) (1)
–7
–6
–5
–4
–3
–2
(1)
–IC/
–IB=250
–1
(2)
–IC/
–IB=500 (3)
–IC/
–IB=1000
TC=25˚C
0 0
–1
–2
–3
–4
VBE(sat) (V)
http://www.semi、con.panaso、nic.co.jIpCCob(A)(pF)、。。
hFE — IC
105 VCE=
–3V TC=25˚C
104
103
102
10
–0.01
–0.1
–1
IC (A)
–10
10000
1000
100
10
1
–0.1
Cob — VCB
IE=0 f=1MHz TC=25˚C
–1
–10
–100
VCB (V)
–100
–30 ICP
–10 IC
–3
–1
ASO
Non repetitive pulse TC=25˚C
t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1462 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB1462L |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SB1463 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 4 | 2SB1465 |
Renesas |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 5 | 2SB1467 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SB1468 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SB1468 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 9 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB1400 |
INCHANGE |
PNP Transistor |
|
| 11 | 2SB1401 |
Hitachi |
Low frequency power amplifier |
|
| 12 | 2SB1402 |
SavantIC |
SILICON POWER TRANSISTOR |
|