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of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
• High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.5 A)
• Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings −60 −60 −7.0 −3.0 −6.0 −1.0 25 2.0 150 −55 to +150 Unit V V V A A A W W °C .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1450 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB1451 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SB1452 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SB1454 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB1454 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1454 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1455 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SB1455 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1455 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1457 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 11 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 12 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |
|