2SB1455 SILICON POWER TRANSISTOR Datasheet

2SB1455 SILICON POWER TRANSISTOR

·With TO-220F package ·Complement to type 2SD2203 ·Low collector saturation voltage: ·Large current capacity APPLICATIONS ·High current power switching applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage.

Features

e breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE== IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A ;IB=-0.4A VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -80 -90 -6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SB1455 TYP. MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A IB1=-IB2=-0.2A VCC=-50V ,RL=25D 0.2 0.7 0.2 µs µs µs hFE-1 .

The same part from a different manufacturer

2SB1455 - INCHANGE

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (.

2SB1455 - Sanyo Semicon Device

Ordering number:EN3250 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1455/2SD2203 80V/7A High-Current Switching Appli.

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2SB1455 - SavantIC