2SB1453 NEC PNP SILICON EPITAXIAL POWER TRANSISTOR Datasheet, en stock, prix

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2SB1453

NEC
2SB1453
2SB1453 2SB1453
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Part Number 2SB1453
Manufacturer NEC
Description of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir...
Features
• High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.5 A)
• Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings −60 −60 −7.0 −3.0 −6.0 −1.0 25 2.0 150 −55 to +150 Unit V V V A A A W W °C ...

Document Datasheet 2SB1453 Data Sheet
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