Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SD2177 I Features • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to ba.
• Low collector to emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45−0.05
+0.1
1
2
3
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
* Junction temperature Storage temperature
VCBO VCEO VEBO ICP IC PC Tj Tstg
−50 −50 −5 −3 −2 1 150 −55 to +150
V V V A A W °C °C
1.2±0.1 0.65 max.
0.1 0.45+ − 0.05
Note) In addition to the lead type shown in the upper figure, the type as shown.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1430 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SB1430 |
INCHANGE |
PNP Transistor | |
3 | 2SB1431 |
NEC |
PNP Silicon Transistor | |
4 | 2SB1431 |
INCHANGE |
PNP Transistor | |
5 | 2SB1432 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR | |
6 | 2SB1435 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
7 | 2SB1436 |
Rohm |
Transistor | |
8 | 2SB1436 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1436 |
INCHANGE |
PNP Transistor | |
10 | 2SB1438 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
11 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
12 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |