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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and lowspeed swit.
Transistor 2SB1430 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -2mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -2mA -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -1.0 μA hFE-1 DC Current Gain IC= -2A; VCE= -2V 2000 20000 hFE-2 DC Current Gain IC= -4A; VCE= -2V 500 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 60 pF Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -2A, IB1= -IB2= -2m.
2SB1430 - SavantIC
·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for moto.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1431 |
NEC |
PNP Silicon Transistor |
|
| 2 | 2SB1431 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1432 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 4 | 2SB1434 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 5 | 2SB1435 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 6 | 2SB1436 |
Rohm |
Transistor |
|
| 7 | 2SB1436 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB1436 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1438 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 10 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 11 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1400 |
INCHANGE |
PNP Transistor |
|