2SB1432 - NEC

2SB1432 PNP SILICON EPITAXIAL TRANSISTOR

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.

Features

• High hFE due to Darlington connection hFE ≥ 1,000 @VCE = −2.0 V, IC = −10 A)
• Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C Ratings −100 −100 −8.0 +
  –10 +
  –20 Unit V V V A A −1.0 30 2.0.