2SB1378 - Panasonic Semiconductor

2SB1378 Silicon PNP Transistor

Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Ju.

Features

0.15 0.7 4.0 0.8 Unit nA µA V V V
  –25
  –20
  –7 90 25
  – 0.4
  –1.2 350 V V MHz VCB =
  –10V, IE = 50mA, f = 200MHz VCB =
  –10V, IE = 0, f = 1MHz 25 pF Pulse measurement FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 180 ~ 350 Rank hFE1 1 Transistor PC — Ta 800
  –1.2 Ta=25˚C 700
  –1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0
  –1
  –2
  –3
  –4
  –5
  –6 IB=
  –10mA 2SB1378 IC — VCE Collector to emitter saturation voltage VCE(sat) (V)
  –100
  –30
  –10
  –3
  –1 Ta=75˚C 25˚C
  –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA)
  – 0.8
  –9mA
  –8mA
  –7mA .