2SB1372 - INCHANGE

2SB1372 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2065 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect.

Features

CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base -Emitter On Voltage IC= -5A; VCE= -5V ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -5A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 60 200 20 15 MHz 200 pF  hFE-2Classifications Q S P 6.