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Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be instal.
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter TOP
–3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
(TC=25˚C)
Symbol ICBO IEBO hFE1 hFE2
* hFE3 VBE VCE(.
2SB1371 - SavantIC
·With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS.
2SB1371 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Comple.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1370 |
Rohm |
Power Transistor |
|
| 2 | 2SB1370 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1370 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1370 |
LGE |
PNP Transistors |
|
| 5 | 2SB1370 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 6 | 2SB1372 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1373 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1373 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1375 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SB1375 |
INCHANGE |
PNP Transistor |
|
| 11 | 2SB1375 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1375 |
GME |
Silicon PNP Transistor |
|