2SB1371 |
Part Number | 2SB1371 |
Manufacturer | Panasonic Semiconductor |
Description | Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current ... |
Features |
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter TOP –3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(... |
Document |
2SB1371 Data Sheet
PDF 51.53KB |
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