2SB1369 - INCHANGE

2SB1369 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage applications. ·TV, monitor vertical output application ·Driver stage applicat.

Features

pecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.4A; VCE= -10V fT Current-Gain—Bandwidth Product IC= -0.4A; VCE= -10V  hFE Classifications O Y 70-140 120-240 2SB1369 MIN TYP. MAX UNIT -180 V -1.0 V -1.0 V -1.0 μA -1.0 μA 70 240 100 MHz NOTICE： ISC reserves the rights to make.