·With TO-220F package ·Complement to type 2SD2060 ·Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VC.
llector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-3A ;IB=-0.3A IC=-3A;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=10V 40 15 MIN -80 2SB1368 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.0 -1.0 -1.7 -1.5 -30 -100 240 V V µA µA 9.0 130 MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semiconductor www.DataSheet.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1361 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1361 |
INCHANGE |
PNP Transistor | |
3 | 2SB1361 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1362 |
INCHANGE |
PNP Transistor | |
5 | 2SB1362 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SB1366 |
INCHANGE |
PNP Transistor | |
7 | 2SB1366 |
Korea Electronics |
TRANSISTOR | |
8 | 2SB1366 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1367 |
INCHANGE |
PNP Transistor | |
10 | 2SB1367 |
Korea Electronics |
TRANSISTOR | |
11 | 2SB1367 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1369 |
SavantIC |
SILICON POWER TRANSISTOR |