·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltag.
on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-25mA; IB=0 IC=-7A; IB=-0.7A IC=-7A;VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 15 MIN -150 2SB1362 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX UNIT V -2.0 -1.8 -50 -50 V V µA µA 200 15 270 MHz pF hFE-2 Classifications Q 60-120 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specif.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2053 ·M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1361 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1361 |
INCHANGE |
PNP Transistor | |
3 | 2SB1361 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1366 |
INCHANGE |
PNP Transistor | |
5 | 2SB1366 |
Korea Electronics |
TRANSISTOR | |
6 | 2SB1366 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB1367 |
INCHANGE |
PNP Transistor | |
8 | 2SB1367 |
Korea Electronics |
TRANSISTOR | |
9 | 2SB1367 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SB1368 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SB1368 |
INCHANGE |
PNP Transistor | |
12 | 2SB1369 |
SavantIC |
SILICON POWER TRANSISTOR |