2SB1319 - Panasonic Semiconductor

2SB1319 Silicon PNP Transistor

Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Jun.

Features

q q q 1.5 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* Symbol VCBO VCEO VEBO ICP IC PC
* Tj Tstg Ratings
  –30
  –20
  –7
  –8
  –5 1 150
  –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 3 2 1 2.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC
  –71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff c.