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·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SD1975 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -2.5 V VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA ; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A ; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -8A ; VCE= -5V 20 COB Output Capacitance IE= 0;VCB= -10V; ftest= 1.0MHz 450 pF fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -5V;ftest= 1.0MHz 20 MHz hFE-2 Classifications Q S P 60-120 80-.
2SB1317 - Panasonic Semiconductor
Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD197.
2SB1317 - SavantIC
·With TO-3PL package ·Complement to type 2SD1975 ·Wide area of safe operation ·High transition frequency fT ·Optimum for.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1314 |
ETC |
Silicon PNP Transistor |
|
| 2 | 2SB1315 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1315 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1316 |
Rohm |
Power Transistor |
|
| 5 | 2SB1316 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2SB1318 |
NEC |
PNP Silicon Transistor |
|
| 7 | 2SB1319 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SB1300 |
NEC |
PNP SILICON TRANSISTOR |
|
| 9 | 2SB1301 |
Renesas |
PNP SIlicon Transistor |
|
| 10 | 2SB1302 |
Sanyo Semicon Device |
PNP Transistor |
|
| 11 | 2SB1302 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 12 | 2SB1302 |
ON Semiconductor |
Bipolar Transistor |
|