·With TO-3PML package ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base volta.
current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IE=-1mA ;IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 60 MIN -120 -5 2SB1315 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V -1.5 -2.0 -50 -50 320 65 200 V V µA µA MHz pF 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1315 Fig.2 outline dimensions 3 .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1977 ·Minimum.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1314 |
ETC |
Silicon PNP Transistor | |
2 | 2SB1316 |
Rohm |
Power Transistor | |
3 | 2SB1316 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
4 | 2SB1317 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
5 | 2SB1317 |
INCHANGE |
PNP Transistor | |
6 | 2SB1317 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB1318 |
NEC |
PNP Silicon Transistor | |
8 | 2SB1319 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
9 | 2SB1300 |
NEC |
PNP SILICON TRANSISTOR | |
10 | 2SB1301 |
Renesas |
PNP SIlicon Transistor | |
11 | 2SB1302 |
Sanyo Semicon Device |
PNP Transistor | |
12 | 2SB1302 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |