(3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1258 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA IC=–.
6typ tf (µs) 0.5typ
2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C
– V CE Characteristics (Typical)
–6
A 3.
– 4 2.
V CE ( sat )
– I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–3
I C
– V BE Temperature Characteristics (Typical)
–6 (V C E =
–4V)
4m
mA
–2.0
mA
–1 .8 m A
IB
–5 Collector Current I C (A)
=
–
–5 Collector Current I C (A)
–1.2 mA
–4
–4
–0.9mA
–3
–2
mp)
–3
)
Temp
(Cas
–2
125˚C
–6A
–4A
–1 I C =
–2A
–1
25˚C
–1
0
0
–1
–2
–3
–4
–5
–6
–0.6
–0.5
–1
–10 Base Current I B (m.
·With TO-220F package ·Complement to type 2SD1785 ·High DC current gain ·DARLINGTON APPLICATIONS ·Driver for solenoid ,r.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@IC= -3A ·Complement.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1252 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
2 | 2SB1253 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | 2SB1253 |
INCHANGE |
PNP Transistor | |
4 | 2SB1254 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
5 | 2SB1254 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SB1254 |
INCHANGE |
PNP Transistor | |
7 | 2SB1255 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
8 | 2SB1255 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1255 |
INCHANGE |
PNP Transistor | |
10 | 2SB1257 |
Sanken electric |
Silicon PNP Transistor | |
11 | 2SB1257 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1259 |
Sanken electric |
Silicon PNP Transistor |