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Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package wh.
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): <
–2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings
–160
–140
–5
–12
–7 70 3 150
–55 to +150 Unit V V V A A W ˚C ˚C
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temper.
2SB1254 - SavantIC
·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage.
2SB1254 - INCHANGE
·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Comp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1252 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 2 | 2SB1253 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SB1253 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1255 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SB1255 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1255 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1257 |
Sanken electric |
Silicon PNP Transistor |
|
| 8 | 2SB1257 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1258 |
Sanken electric |
Silicon PNP Transistor |
|
| 10 | 2SB1258 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1258 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB1259 |
Sanken electric |
Silicon PNP Transistor |
|