2SB1252 - Panasonic Semiconductor

2SB1252 Silicon PNP epitaxial planar type Transistor

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q q 0.7±0.1 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.

Features

q q q q 0.7±0.1 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings
  –120
  –100
  –5
  –8
  –5 45 2 150
  –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperatu.