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Power Transistors 2SB1174 Silicon PNP epitaxial planar type For voltage switching 7.0±0.3 Unit: mm 3.5±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, e.
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
3.0±0.2 2.0±0.2
0˚ to 0.15˚
2.5±0.2
12.6±0.3 7.2±0.3
(1.0)
(1.0)
1.1±0.1
1.0±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C.
2SB1174 - Kexin
SMD Type Silicon PNP Epitaxial Planar Type 2SB1174 Features Low collector-emitter saturation voltage VCE(sat). Satisfact.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1172 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB1172A |
Panasonic Semiconductor |
PNP Transistor |
|
| 3 | 2SB1172A |
Kexin |
Silicon PNP epitaxial planar type Transistor |
|
| 4 | 2SB1173 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 5 | 2SB1173A |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 6 | 2SB1175 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 7 | 2SB1175 |
Kexin |
Silicon PNP epitaxial planar type Transistor |
|
| 8 | 2SB1176 |
Panasonic Semiconductor |
PNP Transistor |
|
| 9 | 2SB1176 |
Kexin |
Silicon PNP epitaxial planar type Transistor |
|
| 10 | 2SB1179 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 11 | 2SB1179A |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 12 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|