2SB1179 - Panasonic

2SB1179 Silicon PNP epitaxial planar type Transistor

Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington For power amplification and switching Complementary to 2SD1749, 2SD1749A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • High-speed switching • I type package enabling direct soldering of the radiating fin to the printed circuit board, et.

Features

• High forward current transfer ratio hFE which has satisfactory linearity
• High-speed switching
• I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) (1.0) 1.1±0.1 1.0±0.2
■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1179 2SB1179A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 15 1.3 150 −55 to +150 °C °C V A A W.