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Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation T.
q q q q
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings
–130
–80
–7
–30
–20 100 3 150
–55 to +150 Unit V V V A A W ˚C ˚C
21.0±0.5 15.0±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be inst.
2SB1156 - SavantIC
·With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATION.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1150 |
NEC |
PNP Transistor |
|
| 2 | 2SB1151 |
SeCoS |
PNP Transistor |
|
| 3 | 2SB1151 |
NEC |
PNP Silicon Transistor |
|
| 4 | 2SB1151 |
UTC |
PNP SILICON TRANSISTOR |
|
| 5 | 2SB1151 |
INCHANGE |
TO-252 PNP Transistor |
|
| 6 | 2SB1151 |
INCHANGE |
TO-126 PNP Transistor |
|
| 7 | 2SB1151 |
Savantic |
Silicon PNP Power Transistors |
|
| 8 | 2SB1152 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | 2SB1153 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 10 | 2SB1154 |
Panasonic Semiconductor |
PNP Transistor |
|
| 11 | 2SB1154 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1154 |
INCHANGE |
PNP Transistor |
|