Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation T.
q q q q
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
21.0±0.5 15.0±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings
–130
–80
–7
–25
–15 80 3 150.
·With TO-3PFa package ·Complement to type 2SD1706 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1150 |
NEC |
PNP Transistor | |
2 | 2SB1151 |
SeCoS |
PNP Transistor | |
3 | 2SB1151 |
NEC |
PNP Silicon Transistor | |
4 | 2SB1151 |
UTC |
PNP SILICON TRANSISTOR | |
5 | 2SB1151 |
INCHANGE |
TO-252 PNP Transistor | |
6 | 2SB1151 |
INCHANGE |
TO-126 PNP Transistor | |
7 | 2SB1151 |
Savantic |
Silicon PNP Power Transistors | |
8 | 2SB1152 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
9 | 2SB1153 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
10 | 2SB1154 |
Panasonic Semiconductor |
PNP Transistor | |
11 | 2SB1154 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1154 |
INCHANGE |
PNP Transistor |